Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We report experimental evidence for the existence of confined polyexcitons in strain-relaxed epitaxial SiGe layers by means of low-temperature photoluminescence. The number of excitons, n, up to four in a polyexciton is confirmed. Our data clearly show that only one type of polyexciton is confined in potential wells generated by lower band-gap regions in SiGe layers due to alloy fluctuations. The radiative annihilation of a polyexciton with a given n produces n-1 photons and a single exciton left behind. The most striking fact is that confined polyexcitons having n>2 do not decay to polyexcitons having n-1. These observations can be explained by the quantum effect of indistinguishability of polyexcitons which possess either zero or integral spin. This effect is enhanced in a confined well since confined polyexcitons interact strongly among themselves in a limited spatial region. Our observations are important to understand the unique properties of a few quantum particles in a confined region. © 1999 The American Physical Society.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry