Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means. © 2001 Elsevier Science B.V.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992