J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Paper
Quantum wells of InAs between AlSb
Abstract
Quantum wells consisting of a single InAs layer confined between two AlSb layers were made. and they exhibited characteristic two-dimensional electron behavior from magneto-transport measurements. Unexpectedly, the electrons appeared to be predominantly extrinsic in nature. unlike the situation in the InAs-GaSb system. © 1984.
Related
R. Ghez, J.S. Lew
Journal of Crystal Growth
Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT