Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Paper
Raman scattering in amorphous Si, Ge and III-V semiconductors
Abstract
A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.
Related
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science