William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Paper
Raman scattering in amorphous Si, Ge and III-V semiconductors
Abstract
A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.
Related
Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993