Ratio of interstitial to substitutional zinc in GaAs and its relation to zinc diffusion

Abstract

An order-of-magnitude estimate of the ratio of singly charged interstitial to substitutional zinc in GaAs is made by combining experimental data for copper in GaAs with theories of solubility and diffusion of interstitial impurities. Calculations of the diffusion constant on the basis of a substitutional- interstitial mechanism yield values which agree to within one or two orders of magnitude with experimental values in the temperature range 750°to 1000°C. © 1963 The American Institute of Physics.