Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have investigated the etching characteristics of InAlAs for reactive ion etching (RIE) with mixtures of argon (Ar) and chlorine (Cl2). Nearly vertical walls and a smooth surface morphology can be achieved for etch rates of up to 200 nm/min. For an application we have produced dry-etched ridge waveguide lasers in the In(Ga)AlAs/InGaAs material system with threshold currents as low as 12 mA. © 1993.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Peter J. Price
Surface Science
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ming L. Yu
Physical Review B