R.S. Goldman, R.M. Feenstra, et al.
Journal of Electronic Materials
The structure of steps on cleaved silicon (111) surfaces is studied by scanning tunneling microscopy. Predominantly [21»1»] oriented steps are observed. Ordered regions of individual steps have unit periodicity along the step edge. A -bonded reconstruction of the step edge is deduced from the images. © 1987 The American Physical Society.
R.S. Goldman, R.M. Feenstra, et al.
Journal of Electronic Materials
Joseph A. Stroscio, R.M. Feenstra, et al.
Physical Review Letters
Joseph A. Stroscio, R.M. Feenstra, et al.
Physical Review B
Fabian D. Natterer, Jeonghoon Ha, et al.
Physical Review B