Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage (Vs), stressing temperature and stressing time (ts) are shown. © 2009 Elsevier B.V. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry