Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Paper
Recovery study of negative bias temperature instability
Abstract
In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage (Vs), stressing temperature and stressing time (ts) are shown. © 2009 Elsevier B.V. All rights reserved.
Related
Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry