Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage (Vs), stressing temperature and stressing time (ts) are shown. © 2009 Elsevier B.V. All rights reserved.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Sung Ho Kim, Oun-Ho Park, et al.
Small