Vladimir Yanovski, Israel A. Wagner, et al.
Ann. Math. Artif. Intell.
We present a model for computing the probability of a parametric failure due to a spot defect. The analysis is based on electromigration in conductors under unidirectional current stress. Analytical solution is given for simple layout and simulations for a more complicated case. Then we show that in some cases electromigration-dependent parametric defects can make a significant contribution to the total yield estimation. © 2004 IEEE.
Vladimir Yanovski, Israel A. Wagner, et al.
Ann. Math. Artif. Intell.
Arkadiy Morgenshtein, Alexander Fish, et al.
IEEE Transactions on VLSI Systems
Michael Moreinis, Arkadiy Morgenshtein, et al.
ICECS 2004
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems