A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Thin gold-film samples near the percolation threshold were fabricated with a resistance range from 10 to 108 © that had an equally large range of 1/f noise. The conduction mechanism and microscopic source of the noise changed from metallic to hopping as the sample resistance increased. Ion milling was used to increase the resistance of individual samples through the metal-insulator transition, and the measured 1/f noise, SV/V2, scaled as R2±0.1 on the metallic side. © 1985 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
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SPIE Advanced Lithography 2010