R.W. Gammon, E. Courtens, et al.
Physical Review B
We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined. © 1986 The American Physical Society.
R.W. Gammon, E. Courtens, et al.
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
R. Ghez, M.B. Small
JES