E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We study the resonant tunneling of a single-channel interacting electron gas through a double-barrier structure. In striking contrast to the noninteracting electron gas, which exhibits resonances with a temperature-independent Lorentzian line shape at low T, we find that with repulsive interactions present the resonances have a width which vanishes as T0. Moreover, at low T the resonance line shapes are determined by a universal scaling function, with power law but non-Lorentzian tails. These predictions should be accessible to experiments in single-channel wires in gated GaAs. © 1992 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
J.C. Marinace
JES
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011