William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We study the resonant tunneling of a single-channel interacting electron gas through a double-barrier structure. In striking contrast to the noninteracting electron gas, which exhibits resonances with a temperature-independent Lorentzian line shape at low T, we find that with repulsive interactions present the resonances have a width which vanishes as T0. Moreover, at low T the resonance line shapes are determined by a universal scaling function, with power law but non-Lorentzian tails. These predictions should be accessible to experiments in single-channel wires in gated GaAs. © 1992 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry