I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
MOSFET samples were fabricated with Na+ ions in the gate oxide. Large peaks in the tunneling conductivity through the oxide were observed which are interpreted as resonant tunneling of electrons via the localized Na+ impurities. The localized sites are believed to arise from Na+ decoration of intrinsic defects in the oxide. © 1986.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Burstein
Ferroelectrics
Frank Stem
C R C Critical Reviews in Solid State Sciences