W.T. Masselink, N. Braslau, et al.
Solid State Electronics
We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.
W.T. Masselink, N. Braslau, et al.
Solid State Electronics
F. Agulló-Rueda, E. Mendez, et al.
Surface Science
J.A. Kash, M. Zachau, et al.
SPIE Physics and Simulation of Optoelectronic Devices 1992
E. Mendez, G. Bastard, et al.
Physica B+C