Revealing SRAM memory content using spontaneous photon emission

Abstract

This paper presents a novel methodology that allows one to reveal SRAM memory content by observing the spontaneous photon emission collected from the backside of the chip. This method is based on our proposed tester-based optical methodology [1] that combines different test patterns, time-integrated and time-resolved emission measurements to localize gates, detect logic states, and identify functional block activity inside a chip in a non-invasive fashion. In this paper, the capability of the technique is demonstrated using a 64 Mb SRAM test chip fabricated in 14 nm SOI technology node. This technique has useful applications for chip debugging, reverse engineering, hardware and software security applications.