Recent advances in MRAM technology
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
We have measured the tunneling spin polarization and associated tunneling magnetoresistance for Co-Pt and Co-V alloys using Al2O3 and AlN barriers. These properties are insensitive to the Pt content of Co-Pt alloys for up to 40 at.% Pt, whereas the spin polarization of Co-V alloys decreases significantly with the addition of small amounts of V. We attribute these different behaviors to the relative strengths of bonds formed between the alloy constituents and oxygen in the Al2O3 tunnel barrier, which thereby influence the corresponding tunneling rates. The results for AlN barriers are consistent with this argument. © 2005 The American Physical Society.
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
Hyon-Seok Song, Kyeong-Dong Lee, et al.
Applied Physics Express
Hyon-Seok Song, Kyeong-Dong Lee, et al.
Applied Physics Letters
Timothy Phung, Aakash Pushp, et al.
Applied Physics Letters