R.A. Kiehl, P.E. Batson, et al.
Physical Review B
We report on room-temperature electron transport measurements in modulation-doped strained Si/SiGe heterostructures, grown by ultrahigh-vacuum chemical vapor deposition. A high room-temperature mobility is expected in such samples because of the strain-induced splitting of the conduction band in the silicon channel. Record values of over 2600 cm2/V s have been measured, almost twice the theoretical maximum for relaxed silicon.
R.A. Kiehl, P.E. Batson, et al.
Physical Review B
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
F. Legoues, P.M. Mooney, et al.
Applied Physics Letters
M.A. Lutz, R.M. Feenstra, et al.
Applied Physics Letters