Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The role of strain relief and kinetics in surfactant-mediated epitaxial growth of Ge on Si(111) was studied with scanning tunneling microscopy. For coverages of up to ≈ 20 ML the images reveal a variety of strain relief mechanisms which include trench formation and increasing surface roughness. Additionally, at 10 ML, the onset of a periodic surface undulation is observed which coincides with the injection of misfit dislocations at the Ge-Si interface. For coverages larger than 20 ML, the Ge epilayer grows as defect-free atomically-flat large terraces. © 1992.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
John G. Long, Peter C. Searson, et al.
JES
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films