Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The role of strain relief and kinetics in surfactant-mediated epitaxial growth of Ge on Si(111) was studied with scanning tunneling microscopy. For coverages of up to ≈ 20 ML the images reveal a variety of strain relief mechanisms which include trench formation and increasing surface roughness. Additionally, at 10 ML, the onset of a periodic surface undulation is observed which coincides with the injection of misfit dislocations at the Ge-Si interface. For coverages larger than 20 ML, the Ge epilayer grows as defect-free atomically-flat large terraces. © 1992.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME