P.S. Ho, M. Liehr, et al.
Surface Science
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
P.S. Ho, M. Liehr, et al.
Surface Science
Ulf Gennser, V.P. Kesan, et al.
Journal of Electronic Materials
Q.Y. Ma, E.S. Yang, et al.
Applied Physics Letters
Ulf Gennser, V.P. Kesan, et al.
Applied Physics Letters