Ulf Gennser, V.P. Kesan, et al.
Physical Review Letters
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Ulf Gennser, V.P. Kesan, et al.
Physical Review Letters
Q.Y. Ma, E.S. Yang, et al.
Applied Physics Letters
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
P.S. Ho, M. Liehr, et al.
Surface Science