D.A. Herman Jr., J.C. Deluca, et al.
Journal of Applied Physics
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
D.A. Herman Jr., J.C. Deluca, et al.
Journal of Applied Physics
P.S. Ho, M. Liehr, et al.
Surface Science
P.W. Li, E.S. Yang, et al.
IEEE Electron Device Letters
Ulf Gennser, V.P. Kesan, et al.
Physical Review Letters