Schottky barrier formation by laser irradiation processing

E.S. Yang; C.M. Wu; H.J. Vollmer; T.O. Sedgewick; R.T. Hodgson

doi:10.1063/1.91965

Applied Physics Letters

Paper

23 Jul 2008

Schottky barrier formation by laser irradiation processing

View publication

Abstract

A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.

Paper

Si-YBaCuO intermixing and reactive patterning technique

Q.Y. Ma, E.S. Yang, et al.

Journal of Electronic Materials

Paper

Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

P.S. Ho, M. Liehr, et al.

Surface Science

Paper

Physical properties of an electron beam - sliding spark device

R.A. McCorkle, H.J. Vollmer

Review of Scientific Instruments

Paper

SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

P.W. Li, E.S. Yang, et al.

IEEE Electron Device Letters

View all publications

Abstract

Related

Si-YBaCuO intermixing and reactive patterning technique

Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

Physical properties of an electron beam - sliding spark device

SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing