Sensitivity of SOI Lateral Diodes for Bolometric Sensing

Abstract

In this study we characterize the thermal sensitivity of lateral diodes fabricated in a commercial 180 nm SOl-CMOS process. The current responsivity to temperature and the low-frequency noise were measured and correlated to the device dimensions. We also report on a FPA microbolometer sensor for THz imaging (0.6-1.2 THz) implemented with lateral diode detectors coupled to on-chip antennas.