Growth kinetics of si and ge nanowires
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
Strained epitaxial layers tend initially to grow as dislocation-free islands. Here we show that such islands, as they increase in size, may undergo a shape transition. Below a critical size, islands have a compact, symmetric shape. But at larger sizes, they adopt a long thin shape, which allows better elastic relaxation of the island's stress. We have observed such elongated islands, with aspect ratios greater than 50:1, in low energy electron microscopy studies of growth of Ag on Si(001). These islands represent a novel approach to the fabrication of ''quantum wires.'' © 1993 The American Physical Society.
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
R.M. Feenstra, Joseph A. Stroscio, et al.
Physical Review Letters
S. Tanaka, C.C. Limbach, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.M. Tromp, R.J. Hamers, et al.
Physical Review B