The DX centre
T.N. Morgan
Semiconductor Science and Technology
We demonstrate that the cryogenic (e.g., 77K=LNT) properties of SiGe-base heterojunction bipolar transistors and circuits are sufficiently advanced to warrant a serious consideration of the merits of cryogenic BiCMOS technologies for future LNT computer applications. In this paper we review the features of epitaxial SiGe-base bipolar technologies which make them particularly suitable for LNT operation, examine the DC and dynamic properties of SiGe-base transistors operating at low temperatures, highlight the profile design constraints unique to the LNT environment, and discuss future research directions and opportunities. © 1992.
T.N. Morgan
Semiconductor Science and Technology
John G. Long, Peter C. Searson, et al.
JES
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering