D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
We demonstrate that the cryogenic (e.g., 77K=LNT) properties of SiGe-base heterojunction bipolar transistors and circuits are sufficiently advanced to warrant a serious consideration of the merits of cryogenic BiCMOS technologies for future LNT computer applications. In this paper we review the features of epitaxial SiGe-base bipolar technologies which make them particularly suitable for LNT operation, examine the DC and dynamic properties of SiGe-base transistors operating at low temperatures, highlight the profile design constraints unique to the LNT environment, and discuss future research directions and opportunities. © 1992.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
K.N. Tu
Materials Science and Engineering: A