Y. Hsu, T. Standaert, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The effects of SiO2 reactive ion etching (RIE) in CClF 3/H2 on the surface properties of the underlying Si substrate have been studied by photoemission and He ion scattering/channeling techniques. We find that RIE introduces a F, C, and Cl containing layer on the Si surface. Furthermore, displacement damage is introduced in the Si near-surface region during RIE processing. The efficacy of O2 plasma or rapid thermal annealing RIE post-treatments for removal of contamination and/or displacement damage has been investigated.
Y. Hsu, T. Standaert, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G.S. Oehrlein, F.M. D'Heurle, et al.
Journal of Applied Physics
D. Angell, G.S. Oehrlein
SPIE Processing Integration 1990
J.F. DeGeolormo, D.K. Sodana, et al.
JES