SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.
C.M. Ransom, T.O. Sedgwick, et al.
ECS Meeting 1983
The effects of SiO2 reactive ion etching (RIE) in CClF 3/H2 on the surface properties of the underlying Si substrate have been studied by photoemission and He ion scattering/channeling techniques. We find that RIE introduces a F, C, and Cl containing layer on the Si surface. Furthermore, displacement damage is introduced in the Si near-surface region during RIE processing. The efficacy of O2 plasma or rapid thermal annealing RIE post-treatments for removal of contamination and/or displacement damage has been investigated.
C.M. Ransom, T.O. Sedgwick, et al.
ECS Meeting 1983
P.D. Kirchner, W.J. Schaff, et al.
Journal of Applied Physics
O. Joubert, G.S. Oehrlein, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.C. Tsang, G.S. Oehrlein, et al.
Applied Physics Letters