S. Engelmann, R. Bruce, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
A kinetic study of thermal donor formation in 450 °C heat-treated modern silicon crystals has been performed and it is concluded that SiO 3 complexes are the dominant thermal donor species (for heat-treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.
S. Engelmann, R. Bruce, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
D. Angell, G.S. Oehrlein
SPIE Processing Integration 1990
R. Ghez, G.S. Oehrlein, et al.
Applied Physics Letters
S.-J. Jeng, G.S. Oehrlein, et al.
Applied Physics Letters