E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The site and nature of the bonding of H at a Ti (0001) surface are established via the analysis of new angle-resolved photoemission measurements by self-consistent electronic-structure calculations. Experimentally observed H-induced surface states are identified with calculated bonding and antibonding combinations of H 1s and Ti 3d, 4s orbitals. The positions of these levels are strongly dependent on local bonding geometry. The H site which minimizes the total energy gives a very good account of the observed spectrum. Ignoring the total energy leads to a more ambiguous structure determination. © 1980 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
J. Tersoff
Applied Surface Science
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids