Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
An improved apparatus which employs a solution growth method called isothermal solution mixing (ISM) has been developed for the preparation of one-dimensional superlattice structures of Ga1-xAlxAs. Growth by this method occurs when two saturated solutions having different compositions are isothermally mixed together in the presence of a GaAs substrate. Structures have been made which exhibit a one-dimensional periodic variation in composition with a period of 1000 Å and 20 periods thick. © 1971.
T.N. Morgan
Semiconductor Science and Technology
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
K.A. Chao
Physical Review B
K. Mahalingam, N. Otsuka, et al.
Applied Physics Letters