P. Alnot, D.J. Auerbach, et al.
Surface Science
An experiment of solution processing of organic thin film transistors (TFT) to a p-type material, is presented. A soluble precursor was prepared by combining a copper(I) sulfide (Cu 2S) and sulfur (1:2 molar ratio) solution with an indium(III) selenide (In 2se 3) and selenium (1:1) solution. Thermally oxidized silicon wafers were cleaned using a piranha process (4:1 concentrated sulfuric acid to hydrogen peroxide) to prepare the films. The experimental result reveals that it is possible to fabricate preliminary ambipolar TFTs within the same Cu 1-xInSe 2-y material system by preparing films with selenium deficit.
P. Alnot, D.J. Auerbach, et al.
Surface Science
E. Burstein
Ferroelectrics
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials