Ming L. Yu
Physical Review B
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
Ming L. Yu
Physical Review B
Hiroshi Ito, Reinhold Schwalm
JES
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals