J. Tersoff
Applied Surface Science
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
J. Tersoff
Applied Surface Science
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Ming L. Yu
Physical Review B
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021