Conference paper
Carbon nanotube electronics and optoelectronics
Ph. Avouris, A. Afzali, et al.
IEDM 2004
The structure of a strain relief region between a Si substrate and a low dislocation density Ge film has been measured by Raman spectroscopy. The composition of the structure has been determined with ≅1000 Å resolution in the growth direction, and the upper portions shown to be largely relaxed. The presence of microscopic inhomogeneities in these alloys is suggested.
Ph. Avouris, A. Afzali, et al.
IEDM 2004
L.J. Klein, K.L.M. Lewis, et al.
Journal of Applied Physics
A. Hartstein, J.R. Kirtley, et al.
Physical Review Letters
G. V. Subba Rao, M.W. Shafer, et al.
Journal of Physical Chemistry