Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Doped nianganite trilayer junction provides a model system for the study of spin-dependent transport across an artificial interface between manganites. Large interface magnetoresistance is observed in nianganite trilayer junctions. Further studies reveal a strongly temperature and junction-bias dependent magnetoresistance, as \vell as a large interaction between the spin-polarized current and the ferromagnetic moment. The physical and materials origin of these and other junction properties are discussed in this brief review. © 1999 Materials Research Society.
T.N. Morgan
Semiconductor Science and Technology
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