Spin-orbit torque driven one-bit magnetic racetrack devices-memory and neuromorphic applications

Abstract

Recent breakthroughs on spin-orbit torque have opened door to more versatile magnetic racetrack memory. Especially, spin-orbit torque driven one-bit three terminal racetrack memory is promising to develop field-free memory and neuromorphic devices that have many figure of merits. However, there are quite a few challenges to overcome to have working racetrack devices such as decent tunneling magnetoresistance, low threshold current density, and homogeneous films. We present here successfully fabricated one-bit three terminal magnetic racetrack devices in which the position of domain wall is readout by magnetic tunnel junctions.