Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Aspects concerning the shape of the potential barrier for the tunneling of spin-polarized electrons through a vacuum are discussed, and STM measurements indicating that the spin polarization increases with decreasing potential barrier thickness are presented. Model calculations of the potential barrier allow critical parameters of the potential barrier to be determined, namely the height φB and the position zm of the energy maximum. Variations in these parameters correlate with the magnitude of the tunneling electron spin polarization. © 1995.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993