Karla Hillerich, Kimberly A. Dick, et al.
Nano Letters
The formation of abrupt Si/Ge heterointerfaces in nanowires presents useful possibilities for bandgap engineering. We grow Si nanowires containing thick Ge layers and sub-1 nm thick Ge "quantum wells" and measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial compressive strains of several percent, while stress at the Si/Ge interface causes lattice rotation. High strains can be achieved in these heterostructures, but we show that they are unstable to interdiffusion.
Karla Hillerich, Kimberly A. Dick, et al.
Nano Letters
Yi-Chia Chou, Mark C. Reuter, et al.
Microscopy and Microanalysis
Priyanka Periwal, Joachim Dahl Thomsen, et al.
Applied Physics Reviews
P. Chaudhari, Heejae Shim, et al.
Thin Solid Films