Cyril Cabral, Christian Lavoie, et al.
JVSTA
The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements of the lattice parameter conducted in situ in an SOI device channel. Comparisons of closed-form, analytical modeling to the measured, depth-averaged strain distributions show close correspondence for the e-SiC features but 95% of the predicted strain in the SOI channel. Mechanical constraint due to the overlying gate and the contribution of SOI underneath the e-SiC in the diffracting volume to the measurements can explain this difference. © 2009 American Institute of Physics.
Cyril Cabral, Christian Lavoie, et al.
JVSTA
David B. Mitzi, Laura L. Kosbar, et al.
Nature
H.-S. Philip Wong, B. Doris, et al.
VLSI-TSA 2003
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IEDM 2004