N. Tega, H. Miki, et al.
IEDM 2009
The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements of the lattice parameter conducted in situ in an SOI device channel. Comparisons of closed-form, analytical modeling to the measured, depth-averaged strain distributions show close correspondence for the e-SiC features but 95% of the predicted strain in the SOI channel. Mechanical constraint due to the overlying gate and the contribution of SOI underneath the e-SiC in the diffracting volume to the measurements can explain this difference. © 2009 American Institute of Physics.
N. Tega, H. Miki, et al.
IEDM 2009
H. Nayfeh, D. Singh, et al.
IEEE Electron Device Letters
Conal E. Murray, Jean L. Jordan-Sweet, et al.
Powder Diffraction
H.-S. Philip Wong, B. Doris, et al.
VLSI-TSA 2003