Henry H.K. Tang, Conal E. Murray, et al.
IBM J. Res. Dev
The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements of the lattice parameter conducted in situ in an SOI device channel. Comparisons of closed-form, analytical modeling to the measured, depth-averaged strain distributions show close correspondence for the e-SiC features but 95% of the predicted strain in the SOI channel. Mechanical constraint due to the overlying gate and the contribution of SOI underneath the e-SiC in the diffracting volume to the measurements can explain this difference. © 2009 American Institute of Physics.
Henry H.K. Tang, Conal E. Murray, et al.
IBM J. Res. Dev
Conal E. Murray, Deepika Priyadarshini, et al.
Applied Physics Letters
Z. Ren, M.V. Fischetti, et al.
IEDM 2003
Özgür Kalenci, Conal E. Murray, et al.
Journal of Applied Physics