K. Hasselbach, J.R. Kirtley, et al.
Physical Review B
We demonstrate that average conduction-band electrons in a wide-band-gap insulator, SiO2, are heated several electronvolts above the conduction-band edge at fields of 5 to 12 MV/cm. The electronic energy distribution appears to be stabilized at these high fields by energy-loss mechanisms other than LO-phonon scattering. © 1984 The American Physical Society.
K. Hasselbach, J.R. Kirtley, et al.
Physical Review B
T.P. Ma, B.H. Yun, et al.
Journal of Applied Physics
J. Mannhart, H. Hilgenkamp, et al.
J. Phys. IV
T.N. Theis, J.R. Kirtley, et al.
Physical Review Letters