Structural and electronic characterization of a dissociated dislocation in GeSi

A dissociated (Formula presented) misfit dislocation at the substrate interface of a (Formula presented) heterojunction has been examined using electron energy loss spectroscopy and annular dark field imaging. New spectra are obtained at the intrinsic stacking fault, at the dislocation cores, and in the strained regions on either side of the stacking fault. In-gap states are verified at the partial dislocation cores. Images resemble accepted structures except at the 90° partial dislocation. Model structures for the object are considered to try to reconcile the imaging and spectral results. © 2000 The American Physical Society.