Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The relaxation of the outermost Ge layers of the H-terminated Ge(111) surface is determined via low-energy electron diffraction intensity analysis. A contraction of the first interlayer spacing d12 by 0.100.05 A and a possible expansion of the second interlayer spacing d23 by 0.050.05 A is found. The influence of the H on the intensity curves is calculated and found to be negligible. A comparison with first-principles calculations is made and a mechanism is discussed that may explain the relaxation. © 1987 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
T.N. Morgan
Semiconductor Science and Technology
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry