J. Beerens, G. Grégoris, et al.
Physical Review B
We have used the cross-sectional transmission electron microscope to study InAs grown by molecular beam epitaxy. For the InAs films directly grown on GaAs, the dislocation density at the InAs-GaAs interface is several orders of magnitude higher than that in the bulk films. Those grown by the step grading technique show strong interactions among dislocations at the interfaces, and a much reduced dislocation density in the thin InAs layers.
J. Beerens, G. Grégoris, et al.
Physical Review B
H. Munekata, L.L. Chang, et al.
Journal of Crystal Growth
Chin-An Chang
Applied Physics Letters
Chin-An Chang
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films