Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition(ALD) facilitates the fabrication of lateral type nanochannels smaller than the e- beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO2. TiO2/TiN,and Al2O3/Ru, we have fabricated lateral sun-10-nm nanochannels with good control over channel diameter, Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-auound-gatin IFETs, an important functional element in an electrofluidic based circuit system. © 2010 American Chemical Society.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Peter J. Price
Surface Science