S.A. Chambers, S. Thevuthasan, et al.
Applied Physics Letters
We investigate the structural and electronic properties of V 2O 3 thin films deposited by oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane sapphire substrates. Annealing the substrates before growth to produce ultra-smooth surfaces improved initial epitaxy, according to in situ reflection high-energy electron diffraction. Surprisingly, films deposited on annealed substrates had a more island-like surface, broader x-ray diffraction peaks, and an increased resistivity of V 2O 3's normally metallic high-temperature phase. We attribute these results to enhanced strain coupling at the interface between the substrate and film, highlighting the vulnerability of V 2O 3's strongly correlated metallic phase to crystalline defects and structural disorder. © 2012 American Institute of Physics.
S.A. Chambers, S. Thevuthasan, et al.
Applied Physics Letters
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
M. Weinelt, A. Nilsson, et al.
Physical Review Letters
J. Stöhr, Y. Wu, et al.
Science