Subsurface relaxations in Si(111)-(7 × 7) structure models

Abstract

Virtually all structure models proposed for the Si(111)-(7 × 7) surface have such drastic changes in the surface topology that substrate relaxations are an important part of the structure. The extent of such relaxations has been studied with Keating-type calculations. The importance of these relaxations in the interpretation of experimental results (Medium Energy Ion Channeling and Blocking and Transmission Electron Diffraction) has been investigated. Quantitative comparisons between experiments and models can only be made if substrate relaxations are taken into account. © 1985.