Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Paper
Superlattice umklapp processes in resonant Raman scattering
Abstract
Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.
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