A. Reisman, M. Berkenblit, et al.
JES
Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.
A. Reisman, M. Berkenblit, et al.
JES
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
A. Gangulee, F.M. D'Heurle
Thin Solid Films
R. Ghez, M.B. Small
JES