Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation. © 2013 American Chemical Society.
T.N. Morgan
Semiconductor Science and Technology
K.A. Chao
Physical Review B
J. Tersoff
Applied Surface Science
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989