J.C. Marinace
JES
This paper presents angle-resolved photoemission spectroscopy data of the core lines of a heavily implanted and laser-annealed Si(100) surface. For the first time unambiguous data show that the laser-annealing process induces an almost complete reconstruction of the inner-layer electronic structure, whereas the outermost layers preserve the behavior of the ion-implanted surface. Ab initio electronic structure calculations performed on a SinH3n-3 cluster strongly indicate that the modifications observed are due to the loss of coordination of the Si atoms, which is recovered after laser annealing only in the inner layers. © 1990 The American Physical Society.
J.C. Marinace
JES
K.A. Chao
Physical Review B
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures