H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Angle-resolved photoemission and inverse photoemission have been used to study the electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge surfaces. For both surfaces, one unoccupied and three occupied surface-state bands have been mapped along the K and M lines in the 1×1 surface Brillouin zone. These bands have characteristics similar to those of the surface-state bands observed for the clean Si(111)7×7 surface. Quantitative differences in the dispersions seem to correlate with the Ge content in the surfaces rather than with surface periodicity. © 1987 The American Physical Society.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997