Aditya Bansal, Keunwoo Kim, et al.
ICICDT 2007
We present asymmetric SRAM cell design approaches to improve Read stability over conventional symmetric SRAM Cell. We show that selective threshold voltage control is more effective than adjusting transistor size for read stability improvement in an asymmetric SRAM cell. We implement statistical DC noise margin monitors and present the hardware measurement data as well as the DC/AC simulation data to support the claims. © 2010 IEEE.
Aditya Bansal, Keunwoo Kim, et al.
ICICDT 2007
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IEEE International SOI Conference 2004
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IRPS 2015
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