Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Julien Autebert, Aditya Kashyap, et al.
Langmuir
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials