S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
R. Ghez, M.B. Small
JES
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Sung Ho Kim, Oun-Ho Park, et al.
Small