Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
T. Schneider, E. Stoll
Physical Review B