A. Krol, C.J. Sher, et al.
Surface Science
Paper
The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
Abstract
Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.
Related
J.Z. Sun
Journal of Applied Physics
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010