The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements

T.H. DiStefano; D.E. Eastman

doi:10.1016/0038-1098(71)90643-0

Solid State Communications

Paper

15 Dec 1971

The band edge of amorphous SiO₂ by photoinjection and photoconductivity measurements

View publication

Abstract

Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.

Conference paper

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

S. Cohen, J.C. Liu, et al.

MRS Spring Meeting 1999

Paper

Brillouin scattering investigation of paraelectric KH2PO4 near the tricritical point

R.W. Gammon, E. Courtens, et al.

Physical Review B

Paper

Catalyst chelation effects in organocatalyzed ring-opening polymerization of lactide

Daniel J. Coady, Amanda C. Engler, et al.

ACS Macro Letters

Paper

Specific heat of silicon in the millidegree region

Robert W. Keyes

Physical Review B

View all publications

Abstract

Related

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

Brillouin scattering investigation of paraelectric KH2PO4 near the tricritical point

Catalyst chelation effects in organocatalyzed ring-opening polymerization of lactide

Specific heat of silicon in the millidegree region