William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The transition temperature of TaSe3 is found to decrease for pressures up to 10 kbar at a rate -7.5 ± 0.3×10-5 °K/bar. This unusually large decrease can only be explained by both a pressure induced lattice stiffening and a decrease in the Fermi level density of states. © 1979.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990