Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The transition temperature of TaSe3 is found to decrease for pressures up to 10 kbar at a rate -7.5 ± 0.3×10-5 °K/bar. This unusually large decrease can only be explained by both a pressure induced lattice stiffening and a decrease in the Fermi level density of states. © 1979.
T.N. Morgan
Semiconductor Science and Technology
Mark W. Dowley
Solid State Communications
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures