Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
This paper reports self-consistent calculations of the electronic structure of a series of deep impurities in Si. For the first time, these calculations provide a detailed description of gap states as well as the resonances and antiresonances within the band continua with the same accuracy as that of bulk-crystal calculations. The analysis of charge densities and wavefunctions in terms of simple models provides an understanding of the chemical bonding, the degree of localization, and the relevance of ideas based on effective-mass theory. © 1981.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Michiel Sprik
Journal of Physics Condensed Matter
Peter E. Blöchl, C.G. Van De Walle, et al.
Physical Review Letters
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery